Paper Code: ETEC-416                                                                             L    T     C
Paper: INTEGRATED CIRCUITS TECHNOLOGY                                 3     1      4 
INSTRUCTIONS TO PAPER SETTERS:                                                                               MAXIMUM MARKS: 75       
1.     Question No. 1 should be compulsory and cover the entire syllabus. This question should have objective or short answer type questions. It should be of 25 marks.
2.     Apart from Q. No. 1 rest of the paper shall consist of four units as per the syllabus. Every unit should have two questions. However, student may be asked to attempt only 1 question from each unit. Each question should be of 12.5 marks.

Unit I
Classification of ICs. Electronic grade Silicon, Czochralski and Flot Zone Crystal Growing Methods, Oxygen and carbon in Silicon, Segregation coefficients, Silicon shaping and wafer preparation, Vapor Phase Epitaxy.                                                                                                               [No. of Hours: 11]

Unit II
Oxidation - Thermal, Dry & Wet, High Pressure and Plasma Oxiadation, Lithography - Optical Lithography, Photomask, Photo resist and Process, Electron Lithography, X-ray Lithography, Ion Beam Lithography.
Etching - Wet Chemical Etching, Reactive etching, Impurity Doping – Diffusion. [No. of Hours: 11]
Unit III
Ion Implantation, Metallization - desired Properties, Applications, Ohmic contacts, Choices and Problems.
Integrated Elements: Isolation of circuit elements, Bipolar Technology: NPN Transistors, PNP Transistors, Integrated Diodes, Semiconductor Resistors, Capacitors and Inductors, MOS Technology: NMOS and CMOS IC Technology.                                                                           [No. of Hours: 11]

Unit IV
Design of typical ICs, Back side of preparation, Wafer sort, Device Separation, Die Bonding, Wire Bonding, Package Types and Considerations, Testing of ICs.
Fabrication Facilities and Environment - pure water system, clean room and personnel, Characteristics of VLSI, Problem of raising the scale of integration - Causes of IC failures - Electron static Discharge Damage and Alpha Particle Induced soft errors, Yield and Reliability, Methods of reliability evaluation, Non silicon Technology (GaAs ICs), Future trends.                                                          [No. of Hours: 11]
Text Books:
1.  S. M. Sze, “VLSI Technology” Mc. Graw Hill.

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